A new extraction method of poly-Si TFT model parameters in the leakage regionWU, W. J; YAO, R. H; ZHENG, X. R et al.Solid-state electronics. 2007, Vol 51, Num 5, pp 778-783, issn 0038-1101, 6 p.Article

Efficient modulo 2ⁿ + 1 multipliers for diminished-1 representationCHEN, J. W; YAO, R. H.IET circuits, devices & systems (Print). 2010, Vol 4, Num 4, pp 291-300, issn 1751-858X, 10 p.Article

Characterization of interface states in a-Si: H/c-Si heterojunctions by an expression of the theoretical diffusion capacitanceZHONG, C. L; YAO, R. H; GENG, K. W et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 49, issn 0022-3727, 495102.1-495102.6Article

A physical model of floating body effects in polysilicon thin film transistorsWU, W. J; YAO, R. H; CHEN, T et al.Solid-state electronics. 2008, Vol 52, Num 6, pp 930-936, issn 0038-1101, 7 p.Article

A physics-based scheme for potentials of a-Si:H TFT with symmetric dual gate considering deep Gaussian DOS distributionJIAN QIN; YAO, R. H.Solid-state electronics. 2014, Vol 95, pp 46-51, issn 0038-1101, 6 p.Article

Analysis of temperature effect on a-Si:H thin film transistorsQIANG, L; YAO, R. H.Solid-state electronics. 2013, Vol 81, pp 13-18, issn 0038-1101, 6 p.Article

A compact model for polysilicon TFTs leakage current including the poole-frenkel effectWU, W. J; YAO, R. H; LI, S. H et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 11, pp 2975-2983, issn 0018-9383, 9 p.Article